Investigating linearity and effect of temperature variation on analog/RF performance of dielectric pocket high-k double gate-all-around (DP-DGAA) MOSFETs

被引：8

作者：

Purwar, Vaibhav ^{[1
]}

Gupta, Rajeev ^{[1
]}

Kumar, Nitish ^{[2
]}

Awasthi, Himanshi ^{[2
]}

Dixit, Vijay Kumar ^{[1
]}

Singh, Kunal ^{[3
]}

Dubey, Sarvesh ^{[4
]}

Tiwari, Pramod Kumar ^{[5
]}

机构：

[1] Rajasthan Tech Univ, Dept Elect Engn, Kota 324010, India

[2] Kanpur Inst Technol, Dept Elect & Commun Engn, Kanpur 208001, Uttar Pradesh, India

[3] Natl Inst Technol, Dept Elect & Commun Engn, Jamshedpur, Bihar, India

[4] BRA Bihar Univ Muzaffarpur, LND Coll Motihari, Dept Phys, Muzaffarpur 845401, Bihar, India

[5] Indian Inst Technol Patna, Dept Elect Engn, Patna, Bihar, India

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2020年 / 126卷 / 09期

关键词：

Dielectric pocket; Double gate-all-around; High temperature; Linearity; Harmonic distortion; Analog; RF performance; SHALLOW EXTENSION SILICON; NOTHING ISESON MOSFET; DRAIN CURRENT MODEL; RF LINEARITY; OPTIMIZATION; TRANSISTOR;

D O I：

10.1007/s00339-020-03929-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The present paper is about using three popular performance boosters in a device to battle with deterioration in device characteristics imposed by temperature variation. The dielectric pocket (DP) technology has been utilized in double gate-all-around MOSFET to limit the leakage current problem. Further, high-K dielectric as gate oxide is employed so that ON-state current may be improved with enhanced device scalability. The boosted immunity towards short-channel effects (SCEs) and improvement in the device's analog performance is demonstrated through comparison between dielectric pocket high-K double Gate-All-Around (DP-DGAA) and double Gate-All-Around (DGAA) MOSFETs with temperature variation from 300 to 500 K by using commercially available ATLAS, a three-dimensional (3D) device simulator from SILVACO.

引用

页数：8

共 50 条

[1] Investigating linearity and effect of temperature variation on analog/RF performance of dielectric pocket high-k double gate-all-around (DP-DGAA) MOSFETs
Vaibhav Purwar
Rajeev Gupta
Nitish Kumar
Himanshi Awasthi
Vijay Kumar Dixit
Kunal Singh
Sarvesh Dubey
Pramod Kumar Tiwari
Applied Physics A, 2020, 126
[2] Impact of Different Gate Dielectric Materials on Analog/RF Performance of Dielectric-Pocket Double Gate-All-Around (DP − DGAA) MOSFETs
Vaibhav Purwar
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[3] Impact of Different Gate Dielectric Materials on Analog/RF Performance of Dielectric-Pocket Double Gate-All-Around (DP - DGAA) MOSFETs
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Gupta, Rajeev
Awasthi, Himanshi
Dubey, Sarvesh
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[4] Impact of Temperature on Analog/RF Performance of Dielectric Pocket Gate-all-around (DPGAA) MOSFETs
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[5] Impact of Temperature on Analog/RF Performance of Dielectric Pocket Gate-all-around (DPGAA) MOSFETs
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[6] Effects of High-k Dielectric Materials on Electrical Performance of Double Gate and Gate-All-Around MOSFET
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[7] Effect of High-k Gate Materials on Analog and RF Performance of Double Metal Double Gate (DMDG) MOSFETs
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[8] Temperature Dependent Performance Evaluation and Linearity Analysis of Double Gate-all-around (DGAA) MOSFET: an Advance Multigate Structure
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[9] Temperature Dependent Performance Evaluation and Linearity Analysis of Double Gate-all-around (DGAA) MOSFET: an Advance Multigate Structure
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[10] Impact of Temperature Variation on Analog, Hot-Carrier Injection and Linearity Parameters of Nanotube Junctionless Double-Gate-All-Around (NJL-DGAA) MOSFETs
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