Role of surface fixed charge in the surface passivation of thermal atomic layer deposited Al2O3 on crystalline-Si

被引：8
|
作者：
Dou, Y. N. [1 ]
He, Y. [2 ]
Huang, C. Y. [1 ]
Zhou, C. L. [3 ]
Ma, X. G. [2 ]
Chen, R. [2 ]
Chu, J. H. [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China
[2] Suntech Power Co Ltd, Shanghai 201114, Peoples R China
[3] Chinese Acad Sci, Inst Elect Engn, Beijing 100190, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2012年 / 109卷 / 03期
关键词：
ALUMINUM-OXIDE; RECOMBINATION; SILICON; INTERFACE;
D O I：
10.1007/s00339-012-7097-x
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work, surface passivation of thermal atomic layer deposited (ALD) Al2O3 films on Si has been investigated. A quantitative analysis shows that field-effect passivation based on surface fixed charge combined with chemical passivation is assumed to contribute to the passivation performance and that a low defect density is critical to passivation quality. The surface fixed negative charge, which is exponentially modulated from similar to 0 cm(-2) to -2x10(12) cm(-2) by annealing, is proposed to have arisen from the reconstruction of the interfacial SiO (x) layer.
引用
收藏
页码：673 / 677
页数：5
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