Electroabsorption waveguide modulators at 1.3 mu m fabricated on GaAs substrates

被引：8
|
作者：
Loi, KK
Shen, L
Wieder, HH
Chang, WSC
机构：
[1] Dept. of Elec. and Comp. Engineering, Univ. of California at San Diego, San Diego
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 09期
关键词：
electrooptic modulation; optoelectronic devices; p-i-n diodes; quantum-confined Stark effect; quantum-well devices;
D O I：
10.1109/68.618487
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An InGaAs-InAlAs multiple-quantum-we (MQW) electroabsorption (EA) waveguide modulator fabricated on a GaAs substrate has been designed and characterized at 1.3-mu m wavelength for microwave signal transmission on an analog fiberoptic link. The modulator structure with a lattice constant 2.5% larger than that of GaAs is grown upon a 0.7-mu m-thick three-stage compositionally step-graded In2Al1-zAs relaxed buffer. The waveguide modulator exhibits a high-electrooptic slope efficiency of 0.56 V-1, a 3-dB electrical bandwidth of 20 GHz, and a large optical saturation intensity in excess of 17 mW. These highspeed optoelectronic modulators could potentially be integrated with on-chip GaAs electronic driver circuits.
引用
收藏
页码：1229 / 1231
页数：3
相关论文
共 50 条
  • [21] 1.3μm Electroabsorption Modulator with InAs/InGaAs/GaAs Quantum Dots
    Ngo, C. Y.
    Yoon, S. F.
    Loke, W. K.
    Cao, Q.
    Lim, D. R.
    Wong, Vincent
    Sim, Y. K.
    Chua, S. J.
    2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5, 2009, : 2825 - +
  • [22] Planar 1.3 and 1.55 μm InGaAs(P)/InP electroabsorption waveguide modulators using oxygen ion mixing and the photoelastic effect
    Pappert, S.A., 1600, American Inst of Physics, Woodbury, NY, United States (75):
  • [23] 1.3-mu m InP-InGaAsP lasers fabricated on Si substrates by wafer bonding
    Wada, H
    Kamijoh, T
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) : 937 - 942
  • [24] ELECTROABSORPTION OF INASP-INP STRAINED MULTIPLE-QUANTUM WELLS FOR 1.3 MU-M WAVE-GUIDE MODULATORS
    HOU, HQ
    CHENG, AN
    WIEDER, HH
    CHANG, WSC
    TU, CW
    APPLIED PHYSICS LETTERS, 1993, 63 (13) : 1833 - 1835
  • [25] Characteristics of 1.3 μm InAs/InGaAs/GaAs quantum dot electroabsorption modulator
    Ngo, C. Y.
    Yoon, S. F.
    Loke, W. K.
    Cao, Q.
    Lim, D. R.
    Wong, Vincent
    Sim, Y. K.
    Chua, S. J.
    APPLIED PHYSICS LETTERS, 2009, 94 (14)
  • [26] THERMALLY STABLE, SUPERLATTICE-ENHANCED 1.3-MU-M INGAAS IMSM PHOTODETECTORS ON GAAS SUBSTRATES
    CHOUDHURY, ANMM
    JAGANNATH, C
    NEGRI, A
    ELMAN, B
    ARMIENTO, CA
    IEEE ELECTRON DEVICE LETTERS, 1991, 12 (06) : 281 - 283
  • [27] 38GHz bandwidth 1.3 μm MQW electroabsorption modulators for RF photonic links
    Loi, KK
    Mei, XB
    Hodiak, JH
    Tu, CW
    Chang, WSC
    ELECTRONICS LETTERS, 1998, 34 (10) : 1018 - 1019
  • [28] 1.3 μm lasers on GaAs substrates using wafer fusion
    Yokohama R & D Lab
    Furukawa Rev, (7-12):
  • [29] Numerical simulation of a silicon-on-insulator waveguide Fabry-Perot interferometer for intensity light modulators at 1.3 mu m
    Vonsovici, A
    Orobtchouk, R
    Koster, A
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1997, 15 (11) : 2124 - 2129
  • [30] Study of 1.3-mu m tapered waveguide spotsize transformers
    Uppal, K
    Tishinin, D
    Kim, I
    Dapkus, PD
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) : 975 - 979
12345