Leakage Current Suppression by Passivation of Defects by Anodic Oxidation of 4H-SiC Schottky Contacts

被引：3
|
作者：
Kato, Masashi [1 ]
Kimura, Masaya [1 ]
Ichimura, Masaya [1 ]
机构：
[1] Nagoya Inst Technol, Dept Engn Phys Elect & Mech, Nagoya, Aichi 4668555, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 04期
基金：
日本科学技术振兴机构;
关键词：
ELECTRICAL CHARACTERISTICS; BARRIER HEIGHT; OXIDE-FILMS; DIODES; INHOMOGENEITIES; BREAKDOWN; GROWTH; FAULTS;
D O I：
10.7567/JJAP.52.04CP02
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
To suppress the negative influence of defects on 4H-SiC Schottky barrier diode characteristics, we have developed a new method called passivation of defects by anodic oxidation (PDA). This method utilizes anodic oxidation as a means to form oxide films on defects of the 4H-SiC surface, and these oxide films can function as a resistive layer to the leakage current of Schottky barriers. We observed the current-voltage characteristics of Ni Schottky contacts on 4H-SiC before and after PDA. We found that the leakage current was significantly suppressed after PDA, while the increase in series resistance caused by PDA can be negligible when we apply PDA for an optimum time duration. These results suggest that the PDA method is a promising technique to improve the performance of 4H-SiC Schottky barrier diodes. (C) 2013 The Japan Society of Applied Physics
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页数：5
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