Compact Modeling of Intrinsic Capacitances in AlGaN/GaN HEMT Devices

被引：0

作者：

Khandelwal, Sourabh ^{[1
]}

Fjeldly, Tor A. ^{[1
]}

机构：

[1] Norwegian Univ Sci & Technol Trondheim, Dept Elect & Telecommun, Trondheim, Norway

来源：

NANOTECHNOLOGY 2012, VOL 2: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL | 2012年

关键词：

AlGaN/GaN HEMTs; MODFETs; Compact Models; VOLTAGE CHARACTERISTICS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an analytical model for intrinsic gate-source and gate-drain capacitances in AlGaN/GaN HEMT devices. A physics-based analytical expression for 2-DEG charge density developed previously by our group along with the Meyer capacitance formulations is used to derive the intrinsic capacitances. The model is in excellent agreement with experimental data.

引用

页码：744 / 747

页数：4

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