Spatial distribution of current density and thermal resistance of high-power AlInGaInN "vertical" and "face-up" light-emitting diodes

被引：0

作者：

Aladov, A. V. ^{[1
]}

Kuptsov, V. D. ^{[2
]}

Chernyakov, A. E. ^{[1
]}

Zakgeim, A. L. ^{[1
]}

Valyukhov, V. P. ^{[2
]}

机构：

[1] RAS, Submicron Heterostruct Microelect Res & Engn Ctr, 26 Politekhnicheskaya St, St Petersburg, Russia

[2] Peter Great St Petersburg Polytech Univ, 29 Politekhnicheskaya St, St Petersburg, Russia

来源：

OPTICAL DESIGN AND TESTING VII | 2016年 / 10021卷

关键词：

high-power flip-chip vertical LED; face-up LED; thermal resistance; current crowding; near-field; electroluminescence;

D O I：

10.1117/12.2242939

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This paper presents a comprehensive analysis of the electroluminescence (EL) and current distributions in connection with heat transfer (thermal resistance) in high-power "vertical" and "face-up" AlGaInN light emitting diodes (LEDs). The study was carried out using a combination of high-resolution EL mapping techniques giving information on the lateral distributions of near-field light emission intensity and thermal transient measurements for evaluation of thermal resistance of LEDs and its elements. It was shown that poor current spreading at high current density causes increase in thermal resistance.

引用

页数：6

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