Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements

被引：12
|
作者：
Cutivet, A. [1 ]
Pavlidis, G. [2 ]
Hassan, B. [1 ]
Bouchilaoun, M. [1 ]
Rodriguez, C. [1 ]
Soltani, A. [1 ]
Graham, S. [2 ]
Boone, F. [1 ]
Maher, H. [1 ]
机构：
[1] Univ Sherbrooke, Lab Nanotechnol Nanosyst, Inst Interdisciplinaire Innovat Technol, CNRS,UMI 3463, Sherbrooke, PQ J1K OA5, Canada
[2] Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 05期
基金：
加拿大自然科学与工程研究理事会;
关键词：
Gallium nitride (GaN); gate resistance thermometry (GRT); high-electron-mobility transistors (HEMTs); modeling; thermoreflectance; transient temperature measurement; THERMAL CHARACTERIZATION; ALGAN/GAN HEMTS; TEMPERATURE; SUBSTRATE; DC;
D O I：
10.1109/TED.2019.2906943
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper details an extraction procedure to fully model the transient self-heating of transistors from a GaN HEMT technology. Frequency-resolved gate resistance thermometry (f-GRT) is used to extract the thermal impedance of HEMTs with various gate widths. A fully scalable analytical model is developed from the experimental results. In the second stage, transient thermoreflectance imaging (TTI) is used to bring deeper insights into the HEMTs' temperature distribution by individually extracting the transient self-heating of each finger. TTI results are further used to successfully validate the f-GRT results and the modeling of the thermal impedance. Overall, f-GRT is demonstrated to be a fast and robust method for characterizing the transient thermal characteristics of a GaN HEMT. For the first time to the authors' knowledge, a scalable model of the thermal impedance is extracted fully from experimental results.
引用
收藏
页码：2139 / 2145
页数：7
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