Remote AP-PECVD of silicon dioxide films from hexamethyldisiloxane (HMDSO)

被引：68
|
作者：
Alexandrov, SE
McSporran, N
Hitchman, ML
机构：
[1] St Petersburg State Polytech Univ, Dept Elect Mat Technol, St Petersburg 195251, Russia
[2] Univ Strathclyde, Dept Pure & Appl Chem, Glasgow G1 1XL, Lanark, Scotland
来源：
CHEMICAL VAPOR DEPOSITION | 2005年 / 11卷 / 11-12期
关键词：
plasma-enhanced CVD; atmospheric-pressure CVD; silicon dioxide;
D O I：
10.1002/cvde.200506385
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
In this paper we report on a study of an AP-PECVD process based on a simple, and very inexpensive, dielectric barrier discharge using a standard mains supply frequency. We have investigated the effect of a range of deposition parameters on the properties of silicon oxide layers grown from a HMDSO/O-2/Ar system. It is shown that the flux of energetic species from the discharge generation is a critical parameter in determining the growth rate and characteristics of the deposited films. Growth rates up to 10 nm min(-1) can be achieved and layer properties, such as refractive index and breakdown voltage, are comparable with those obtained by more conventional CVD processes. General optimum conditions for high growth rates and good quality films can be inferred from the results.
引用
收藏
页码：481 / 490
页数：10
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