Ammonothermal Crystal Growth of GaN Using an NH4F Mineralizer

被引：47

作者：

Bao, Quanxi ^{[1
,3
]}

Saito, Makoto ^{[1
,2
]}

Hazu, Kouji ^{[1
]}

Furusawa, Kentaro ^{[1
]}

Kagamitani, Yuji ^{[2
]}

Kayano, Rinzo ^{[3
]}

Tomida, Daisuke ^{[1
]}

Qiao, Kun ^{[1
]}

Ishiguro, Tohru ^{[1
]}

Yokoyama, Chiaki ^{[1
]}

Chichibu, Shigefusa F. ^{[1
]}

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan

[2] Mitsubishi Chem Corp, Ushiku, Ibaraki 3001295, Japan

[3] Japan Steel Works Ltd, Shinagawa Ku, Tokyo 1410032, Japan

来源：

CRYSTAL GROWTH & DESIGN | 2013年 / 13卷 / 10期

关键词：

EPITAXY;

D O I：

10.1021/cg4007907

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

NH4F is demonstrated to be a promising mineralizer for the acidic ammonothermal crystal growth of GaN. In comparison with other acidic mineralizers such as NH4Cl, NH4Br, and NH4I, NH4F behaves distinctively different First, NH4F affords a negative temperature gradient for crystal growth of GaN in supercritical NH3 at a temperature range from 550 to 650 degrees C. Second, it enables GaN crystal growth in polar (c plane), semipolar, and nonpolar directions (a plane and m plane). Third, NH4F remarkably increases both the growth rate and quality of the GaN crystal. With the aid of NH4F, self-nucleation of GaN and bulk growth of hexagonal GaN crystals from the self-nucleated seed have been realized.

引用

页码：4158 / 4161

页数：4

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