Electrical properties of Ge-Au films prepared by magnetron sputtering

被引：6
|
作者：
Berlicki, TM [1 ]
Prociów, EL [1 ]
Beensh-Marchwicka, G [1 ]
Osadnik, SJ [1 ]
机构：
[1] Wroclaw Univ Technol, Inst Microsyst Technol, PL-50372 Wroclaw, Poland
来源：
VACUUM | 2002年 / 65卷 / 01期
关键词：
D O I：
10.1016/S0042-207X(01)00409-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Results of investigation of the films fabricated of Ge-Au alloy have been presented. The films were deposited on glass substrate by magnetron sputtering method. The influence of substrate temperature during the process and gold content in the deposited film on resistivity and Seebeck coefficient were studied. With the growth of substrate temperature, the resistivity and temperature coefficient of resistance are decreasing whereas the Seebeck coefficient increases. The films with Au content of 2.2, 4.5 and 6.5 at% were examined. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：73 / 79
页数：7
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