Combined Electric and Magnetic Field Tuning of the Impedance of Lanthanum Strontium Manganite Thin Film Interdigital Electrode Devices

被引：0

作者：

Al Ahmad, Mahmoud ^{[1
]}

机构：

[1] UAE Univ, Dept Elect Engn, Al Ain, U Arab Emirates

来源：

2018 PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM (PIERS-TOYAMA) | 2018年

关键词：

CURRENT-VOLTAGE CHARACTERISTICS; P-N HETEROSTRUCTURE; GIANT MAGNETORESISTANCE; MICROSTRUCTURE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, interdigitated structures were used to study the behavior of LSMO thin films under dc field bias. It is found that the resistance of the LSMO device can be tuned by 60% at 1 kHz, using an applied electric field. The impedance dependence on temperature and voltage, along with the calculated magnetic fields induced via Ampere's law suggest that the resistance change in our LSMO device is due to the combined electric and magnetic effects. It is shown that the induced current in the LSMO films generates a magnetic field that is sufficient to cause the reduction in resistance.

引用

页码：285 / 290

页数：6

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