Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells

被引：7
|
作者：
Xu, Lifang [2 ]
Patel, Dinesh [2 ]
Menoni, Carmen S. [2 ]
Pikal, Jon M. [3 ]
Yeh, Jeng-Ya [4 ]
Huang, J. Y. T. [4 ]
Mawst, Luke J. [4 ]
Tansu, Nelson [1 ]
机构：
[1] Lehigh Univ, Dept Elect & Comp Engn, Ctr Photon & Nanoelect, Bethlehem, PA 18015 USA
[2] Colorado State Univ, Dept Elect & Comp Engn, Ft Collins, CO 80523 USA
[3] Univ Wyoming, Dept Elect & Comp Engn, Laramie, WY 82071 USA
[4] Univ Wisconsin Madison, Dept Elect & Comp Engn, Reed Ctr Photon, Madison, WI 53706 USA
来源：
IEEE PHOTONICS JOURNAL | 2012年 / 4卷 / 06期
基金：
美国国家科学基金会;
关键词：
InGaAsN quantum well (QW); carrier recombination dynamics; carrier localization; 1.3-mu m lasers; hole leakage; CURRENT INJECTION EFFICIENCY; TEMPERATURE SENSITIVITY; THRESHOLD-CURRENT; GAINNAS LASERS; OPTICAL GAIN; NITROGEN; MODULATION;
D O I：
10.1109/JPHOT.2012.2233465
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The time evolution of the photoluminescence (PL) of 1300-nm emitting InGaAsN/GaAs/GaAsP strain-compensated single quantum well (QW) in the temperature range of T 10 K - 300 K is investigated. The PL spectra observed at the early stages of carrier recombination is dominated by two transitions. These two transitions are identified as the first quantized electron state to heavy-hole state (e1-hh1) and electron to light-hole state (e1-lh1) from the analysis of polarized photocurrent measurements in combination with k . p simulation of the band structure. At longer time delays, the dilute-nitride QW exhibits carrier localization at low temperatures and faster recombination time at higher temperatures. The PL dynamics characteristics observed in the InGaAsN QW are different from those measured from the InGaAs QW.
引用
收藏
页码：2382 / 2389
页数：8
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