A x3 Sub-Sampling Mixer for a 77 GHz Automotive Radar Receiver in 28 nm FD-SOI CMOS Technology

被引:2
|
作者
Flete, Alexandre [1 ]
Viallon, Christophe [2 ]
Cathelin, Philippe [3 ]
Parra, Thierry [2 ]
机构
[1] Univ Toulouse, STMicroelectron LAAS, CNRS, UT3, Toulouse, France
[2] Univ Toulouse, LAAS, CNRS, UT3, Toulouse, France
[3] STMicroelectronics, Crolles, France
关键词
Millimeter-wave; Sub-harmonic; Passive mixer; Frequency down-conversion; Low duty cycle;
D O I
10.1109/SiRF53094.2022.9720061
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents an innovative x3 sub-sampling frequency downconverter for converting signals around 77 GHz from a 26 GHz LO signal. With a LO frequency divided by 3 this topology allows drastic simplifications on the receiver's LO distribution chain. The sub-sampling mixer operation principle is described and implemented with 28-nm FD-SOI CMOS technology. Simulation results show a 1dB input-referred compression power (ICP1dB) of +3 dBm and a 14.4 dB Noise Figure (NF) with a -2.5 dB conversion gain. The mixer's LO signal shaper consumption is 36 mW on a 1.2V supply while the passive mixer core doesn't require DC power.
引用
收藏
页码:52 / 54
页数:3
相关论文
共 50 条
  • [41] Closed-Form Analysis of Metastability Voltage in 28-nm UTBB FD-SOI CMOS Technology
    Olivera, Fabian
    Petraglia, Antonio
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2020, 67 (04) : 625 - 629
  • [42] A 30 GHz Low Power & High Gain Low Noise Amplifier with Gm-boosting in 28nm FD-SOI CMOS Technology
    Konidas, Georgios
    Gkoutis, Panagiotis
    Kolios, Vasilis
    Kalivas, Grigorios
    2019 8TH INTERNATIONAL CONFERENCE ON MODERN CIRCUITS AND SYSTEMS TECHNOLOGIES (MOCAST), 2019,
  • [43] A 31 GHz body-biased configurable power amplifier in 28 nm FD-SOI CMOS for 5 G applications
    Torres, Florent
    Kerherve, Eric
    Cathelin, Andreia
    De Matos, Magali
    INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 2021, 13 (01) : 3 - 20
  • [44] 28 GHz Down-Conversion Mixer with RF Back-Gate Excitation Topology in 22-nm FD-SOI
    Nabet, Massinissa
    Rack, Martin
    Nyssens, Lucas
    Raskin, Jean-Pierre
    Lederer, Dimitri
    2022 17TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2022), 2022, : 296 - 299
  • [45] A 24-28GHz Reconfigurable CMOS Power Amplifier in 22nm FD-SOI for Intelligent SoC Applications
    Mayeda, Jill C.
    Lie, Donald Y. C.
    Lopez, Jerry
    2018 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC), 2018, : 111 - 112
  • [46] Full Swing 20 GHz Frequency Divider with 1 V Supply Voltage in FD-SOI 28 nm Technology
    Ozsema, Hasene Gulperi
    Kostak, Duygu
    Demirci, Tugba
    Leblebici, Yusuf
    2015 NORDIC CIRCUITS AND SYSTEMS CONFERENCE (NORCAS) - NORCHIP & INTERNATIONAL SYMPOSIUM ON SYSTEM-ON-CHIP (SOC), 2015,
  • [47] In-situ heater for thermal assist recovery of MOS devices in 28 nm UTBB FD-SOI CMOS technology
    Galy, P.
    Lethiecq, R.
    Bawedin, M.
    SOLID-STATE ELECTRONICS, 2020, 168
  • [48] Design and Evaluation of a 10 GHz LNA with Balun and Diodes for HBM and CDM ESD Protection in 28 nm CMOS FD-SOI
    Guedes, Thalis Da C.
    Bourgeat, Johan
    Barragan, Manuel J.
    Duchamp, Jean-Marc
    Ferrari, Philippe
    2024 37TH SBC/SBMICRO/IEEE SYMPOSIUM ON INTEGRATED CIRCUITS AND SYSTEMS DESIGN, SBCCI 2024, 2024, : 60 - 64
  • [49] Extended investigation of a novel MOS device for in-situ heating in 28 nm UTBB FD-SOI CMOS technology
    Lethiecq, R.
    Bawedin, M.
    Galy, P.
    2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2019,
  • [50] A 28GHz Self-Contained Power Amplifier for 5G applications in 28nm FD-SOI CMOS
    Moret, Boris
    Knopik, Vincent
    Kerherve, Eric
    2017 IEEE 8TH LATIN AMERICAN SYMPOSIUM ON CIRCUITS & SYSTEMS (LASCAS), 2017,