Correlation between Carbon Incorporation and Defect Formation in Quasi-Single Crystalline Silicon

被引：0

作者：

Tsuchiya, Yuki ^{[1
]}

Kusunoki, Hiroki ^{[1
]}

Miyazaki, Naoto ^{[1
]}

Sameshima, Takashi ^{[1
]}

Tachibana, Tomihisa ^{[1
]}

Kojima, Takuto ^{[3
]}

Arafune, Koji ^{[4
]}

Ohshita, Yoshio ^{[3
]}

Ono, Haruhiko ^{[2
]}

Ogura, Atsushi ^{[1
]}

机构：

[1] Meiji Univ, Kawasaki, Kanagawa 2148571, Japan

[2] Kanagawa Ind Technol Ctr, Ebina, Kanagawa 2430435, Japan

[3] Toyota Technol Inst, Nagoya, Aichi 4688511, Japan

[4] Univ Hyogo, Himeji, Hyogo 6712280, Japan

来源：

2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2012年

关键词：

carbon incorporation; defect formation; precipitate; small-angle grain boundary; solar cell; quasi-single crystalline silicon;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We investigated the correlation between C incorporation and defect generation in quasi-single crystalline silicon ingots. The substitutional carbon concentration and etch pit density in the ingot fabricated with atmosphere control to suppress C incorporation were much lower than those in the ingot fabricated without controll. In addition, the precipitates consisted of C, N and Si were confirmed in the ingot fabricated without control. After the precipitation, small-angle grain boundaries (SA-GBs) were generated. We consider that the precipitation were the origin of SA-GBs, therefore the crystalline defect density can be decreased by reducing the incorporation of C impurities during crystal growth.

引用

页数：5

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