New hydrogen-related radiation-induced deep-level center in boron-doped silicon

被引：5
|
作者：
Yarykin, N [1 ]
Feklisova, O
Weber, J
机构：
[1] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia
[2] Tech Univ Dresden, D-01062 Dresden, Germany
来源：
PHYSICA B-CONDENSED MATTER | 2001年 / 308卷
基金：
俄罗斯基础研究基金会;
关键词：
silicon; hydrogen; radiation defects; bistability;
D O I：
10.1016/S0921-4526(01)00677-9
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The interaction of hydrogen impurity with radiation defects in silicon is studied by DLTS. Prior to the electron irradiation at room temperature, hydrogen was introduced into the p-type samples by wet chemical etching. Two new deep-level centers are detected only in float-zone crystals. The depth profiles of the new centers resemble those of the boron-hydrogen pairs. One center reveals a charge-driven bistability; the deep levels corresponding to both of its configurations as well as transformation kinetics are determined. Our results indicate that the bistable defect is interstitial in nature and includes boron and hydrogen. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：159 / 162
页数：4
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