Effect of p-doping profile on performance of strained multi-quantum-well InGaAsP/InP lasers. Experiment and modeling.

被引：0
|
作者：
Belenky, GL [1 ]
Reynolds, CL [1 ]
Kazarinov, RF [1 ]
Swaminathan, V [1 ]
Luryi, S [1 ]
Lopata, J [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
15TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE - CONFERENCE DIGEST | 1996年
关键词：
D O I：
10.1109/ISLC.1996.553752
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：69 / 70
页数：2
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