Negative differential resistance in magnetic tunnel junction systems

被引：4
|
作者：
Filatov, Alexander [1 ]
Pogorelov, Alexander [1 ]
Pogoryelov, Yevgen [2 ]
机构：
[1] NAS Ukraine, GV Kurdyumov Inst Met Phys, UA-03142 Kiev, Ukraine
[2] Univ Gothenburg, Dept Phys, S-41296 Gothenburg, Sweden
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2014年 / 251卷 / 01期
关键词：
magnetic properties; magnetic tunnel junctions; negative differential resistance; polycrystalline materials; thin films; RECORDING MEDIA; RATE DEPENDENCE; THIN-FILMS; MAGNETORESISTANCE; NANOSTRUCTURES; COERCIVITY; DIFFUSION; MGO;
D O I：
10.1002/pssb.201349258
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We study the electrophysical properties of the Fe/MgO/Fe magnetic tunnel junctions (MTJ) with impurities. Sample structures are fabricated on top of fine-crystalline glass-ceramic substrates by e-beam evaporation in a relatively low vacuum (approximate to 10(-4)Torr). The influence of the first magnetic layer fabrication conditions on the degradation of the MTJ is explained by the interlayer diffusion. Various models of electrophysical processes in MTJ on polycrystalline substrates are discussed. The current-voltage (I-V) characteristics of the fabricated structures are found to exhibit a region with negative differential resistance, similar to the one in tunneling diodes. We explain this phenomenon by the formation of excitons in the MgO layer modified by the conductive impurity atoms and their diffusion. The obtained results will be useful in the development of MRAM devices containing MTJs and tunneling diodes. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：172 / 177
页数：6
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