Numerical simulations of transport processes during Czochralski growth of semiconductor compounds

Several important transport processes during Czochralski growth of semiconductor compounds, such as solute-concentration-driven flow, heat transfer, and solute segregation are numerically simulated using a finite-volume methodology. Our results show strong effects of flow patterns and heal transfer on solute distribution. The effects of crystal rotation are also studied numerically. All the calculations are conducted on personal computers (Pentium) with a user-friendly Graphics User Interface, and each solution takes less than 10 min: indicating that our methodology is of great usefulness as a cost-effective, easy-to-use design tool for crystal growers.