Excitonic origin of enhanced luminescence quantum efficiency in MgZnO/ZnO coaxial nanowire heterostructures

被引：17
|
作者：
Yoo, Jinkyoung [1 ,2 ,3 ]
Chon, Bonghwan [4 ]
Tang, Wei [5 ]
Joo, Taiha [4 ]
Dang, Le Si [6 ,7 ]
Yi, Gyu-Chul [1 ,2 ]
机构：
[1] Seoul Natl Univ, Ctr Semicond Nanorods, Natl Creat Res Initiat, Seoul 151747, South Korea
[2] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea
[3] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA
[4] POSTECH, Dept Chem, Pohang 790784, Gyeongbuk, South Korea
[5] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90024 USA
[6] CNRS, Inst Neel, F-38042 Grenoble, France
[7] Univ Grenoble 1, F-38042 Grenoble, France
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 22期
基金：
新加坡国家研究基金会;
关键词：
ZNO NANORODS;
D O I：
10.1063/1.4721519
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of exciton transport on luminescence efficiency was investigated by time-resolved photoluminescence and spatially resolved cathodoluminescence spectroscopy. The internal quantum efficiency of ZnO nanowire (NW) increased from 45% to 56% due to formation of a MgZnO/ZnO coaxial NW heterostructure. MgZnO shell layer formation induced a decrease in the exciton diffusion length and diffusion coefficient from 150 to 120 nm and 9.8 to 6.4 cm(2)/s, respectively. The change in exciton transport characteristics indicated that exciton transport, in addition to the surface passivation effect, was an important factor determining the luminescence efficiency in the coaxial NW heterostructure. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4721519]
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页数：4
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