Bias-assisted H2 gas generation in HCl and KOH solutions using n-type GaN photoelectrode

被引:47
|
作者
Fujii, K [1 ]
Ohkawa, K [1 ]
机构
[1] Tokyo Univ Sci, Dept Appl Phys, Nakamura Inhomogeneous Crystal Project, Exploratory Res Adv Technol,Japan Sci & Technol A, Tokyo 1628601, Japan
关键词
D O I
10.1149/1.2161572
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
We studied H-2 gas generation using a GaN photoelectrode in both HCl and KOH solutions. The photocurrent in KOH was larger than that in HCl under a small extra bias, and caused a more extensive H-2 generation at the beginning. GaN corrosion in HCl was less extended than that in KOH during photoelectrochemical reactions. The stability of the GaN photoelectrode in HCl was a result of H2O reduction and Cl- oxidation instead of water photoelectrolysis. (c) 2006 The Electrochemical Society.
引用
收藏
页码:A468 / A471
页数:4
相关论文
共 50 条
  • [41] MOF-derived porous TiO2 decorated with n-type Cu2O for efficient photocatalytic H2 evolution
    Bai, Xue
    Liu, Bo
    Zhang, Wei
    Wang, Yang
    Yu, Yu
    Yang, Yang
    Guo, Jianping
    NEW JOURNAL OF CHEMISTRY, 2021, 45 (37) : 17332 - 17338
  • [42] Probing the surface of HNO3, HCL, and H2SO4 solutions using sum frequency generation
    Schnitzer, C
    Baldelli, S
    Campbell, DJ
    Schultz, MJ
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1998, 216 : U709 - U709
  • [43] Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures
    刘双韬
    杨静
    赵德刚
    江德生
    梁锋
    陈平
    朱建军
    刘宗顺
    刘炜
    邢瑶
    彭莉媛
    张立群
    王文杰
    李沫
    Chinese Physics B, 2018, 27 (12) : 503 - 507
  • [44] Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures
    Liu, Shuang-Tao
    Yang, Jing
    Zhao, De-Gang
    Jiang, De-Sheng
    Liang, Feng
    Chen, Ping
    Zhu, Jian-Jun
    Liu, Zong-Shun
    Liu, Wei
    Xing, Yao
    Peng, Li-Yuan
    Zhang, Li-Qun
    Wang, Wen-Jie
    Li, Mo
    CHINESE PHYSICS B, 2018, 27 (12)
  • [45] Visible light-assisted S-scheme p- and n-type semiconductors anchored onto graphene for increased photocatalytic H2 production via water splitting
    Kakavandi, Babak
    Moradi, Mohsen
    Hasanvandian, Farzad
    Bahadoran, Ashkan
    Mohebolkhames, Erfan
    Golshan, Masoumeh
    Ganachari, Sharanabasava
    Aminabhavi, Tejraj M.
    CHEMICAL ENGINEERING JOURNAL, 2024, 487
  • [46] INSITU DOPED POLYCRYSTALLINE SILICON SELECTIVE GROWTH USING THE SIH2CL2/H2/HCL/PH3 GAS SYSTEM
    OHSHITA, Y
    KITAJIMA, H
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) : 1871 - 1873
  • [47] WNx film deposition by PECVD using WF6/N2/H2 gas mixture
    Richter, K
    Riedel, S
    Schulz, SE
    Gessner, T
    ADVANCED METALLIZATION CONFERENCE 2000 (AMC 2000), 2001, : 301 - 306
  • [48] Steel nitriding by atmospheric-pressure plasma jet using N2/H2 mixture gas
    Nagamatsu, H.
    Ichiki, R.
    Yasumatsu, Y.
    Inoue, T.
    Yoshida, M.
    Akamine, S.
    Kanazawa, S.
    SURFACE & COATINGS TECHNOLOGY, 2013, 225 : 26 - 33
  • [49] Structural and Electrical Characteristics of GaN HEMTs With In Situ SiNx Gate Dielectrics Grown by Rationally Modulated N2/H2 Carrier Gas
    Huang, Zhe
    Zhang, Haochen
    Chen, Yao
    Liang, Fangzhou
    Yang, Lei
    Liang, Kun
    Xing, Zhanyong
    Wang, Hu
    Zhang, Mingshuo
    Li, Jiayao
    Ye, Yankai
    Guo, Shiping
    Sun, Haiding
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (08) : 4590 - 4595
  • [50] Co-generation of Ammonia and H2 from H2O Vapor and N2 Using a Membrane Electrode Assembly
    Kugler, Kurt
    Kriescher, Stefanie M. A.
    Giela, Martin
    Hosseiny, Schwan
    Thimm, Kristof
    Wessling, Matthias
    CHEMIE INGENIEUR TECHNIK, 2020, 92 (1-2) : 62 - 69