Bias-assisted H2 gas generation in HCl and KOH solutions using n-type GaN photoelectrode

被引:47
|
作者
Fujii, K [1 ]
Ohkawa, K [1 ]
机构
[1] Tokyo Univ Sci, Dept Appl Phys, Nakamura Inhomogeneous Crystal Project, Exploratory Res Adv Technol,Japan Sci & Technol A, Tokyo 1628601, Japan
关键词
D O I
10.1149/1.2161572
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
We studied H-2 gas generation using a GaN photoelectrode in both HCl and KOH solutions. The photocurrent in KOH was larger than that in HCl under a small extra bias, and caused a more extensive H-2 generation at the beginning. GaN corrosion in HCl was less extended than that in KOH during photoelectrochemical reactions. The stability of the GaN photoelectrode in HCl was a result of H2O reduction and Cl- oxidation instead of water photoelectrolysis. (c) 2006 The Electrochemical Society.
引用
收藏
页码:A468 / A471
页数:4
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