Positive magnetoresistance in the variable range hopping regime in metallic n-type InP

被引：11
|
作者：
El kaaouachi, A
Moudden, A
Biskupski, G
机构：
[1] Univ Ibnou Zohr, Lab Instrumentat & Mesures, Fac Sci, Agadir 80000, Morocco
[2] Univ Sci & Tech Lille Flandres Artois, Spect Hertzienne Lab, F-59655 Villeneuve Dascq, France
来源：
PHYSICA B | 1999年 / 266卷 / 04期
关键词：
positive magnetoresistance; metallic n-type InP; hopping conduction;
D O I：
10.1016/S0921-4526(98)01217-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Experimental results are reported on high field positive magnetoresistance in metallic n-type InP in which range hopping occurs at low temperatures. We have observed positive magnetoresistance associated with variable range hopping conduction. Experimental data are tentatively compared with available models in the insulating regime. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：378 / 381
页数：4
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