Synthesis of BSO (Bi4Si3O12) scintillation thin film by sol-gel method

被引：12
|
作者：
Zhu, Xiaoxing [1 ]
Xie, Jianjun [1 ]
Lin, Debao [1 ]
Guo, Zhengqing [1 ]
Xu, Jian [1 ]
Shi, Ying [1 ]
Lei, Fang [1 ]
Wang, Yali [1 ]
机构：
[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2014年 / 582卷
基金：
美国国家科学基金会;
关键词：
Bi4Si3O12; Sol-gel process; Thin film; CRYSTAL;
D O I：
10.1016/j.jallcom.2013.08.012
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Bismuth silicate (Bi4Si3O12, BSO) thin films have been fabricated by sol-gel process. The stable sol was synthesized by using Bi(NO3)(3)center dot 5H(2)O and Si(OC2H5)(4) (TEOS) as the precursors, acetic acid and 2-ethoxyethanol as the solvents. The thin film precursor was deposited onto SiO2 substrates by spin-coating at 3000 rpm and was dried at 110 degrees C. X-ray diffraction showed that BSO phase starts to form at 700 degrees C and single-phase BSO polycrystalline thin films were obtained at 800 degrees C. The micromorphology and luminescent properties of coated films were characterized by means of scanning electron microscopy and fluorophotometer respectively. (c) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：33 / 36
页数：4
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