A Low Noise Amplifier with 1.1dB Noise Figure and+17dBm OIP3 for GPS RF Receivers

被引：1
|
作者：
Xiang, Yong [1 ]
Luo, Yanbin [1 ]
Zhou, Renjie [1 ]
Ma, Chengyan [1 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
来源：
INDUSTRIAL INSTRUMENTATION AND CONTROL SYSTEMS II, PTS 1-3 | 2013年 / 336-338卷
关键词：
Global Positioning System(GPS); low-noise-amplifier(LNA); SiGe; Noise Figure(NF); output third-order intercept point(OIP3);
D O I：
10.4028/www.scientific.net/AMM.336-338.1490
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
A 1.575GHz SiGe HBT(heterojunction bipolar transistor) low-noise-amplifier(LNA) optimized for Global Positioning System(GPS) L1-band applications was presented. The designed LNA employed a common-emitter topology with inductive emitter degeneration to simultaneously achieve low noise figure and input impedance matching. A resistor-bias-feed circuit with a feedback resistor was designed for the LNA input transistor to improve the gain compression and linearity performance. The LNA was fabricated in a commercial 0.18 mu m SiGe BiCMOS process. The LNA achieves a noise figure of 1.1 dB, a power gain of 19dB, a input 1dB compression point(P1dB) of -13dBm and a output third-order intercept point(OIP3) of +17dBm at a current consumption of 3.6mA from a 2.8V supply.
引用
收藏
页码：1490 / 1495
页数：6
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