Lattice thermal conductivity and spectral phonon scattering in FeVSb-based half-Heusler compounds

被引：57

作者：

Zhu, T. J. ^{[1
,2
,3
]}

Fu, C. G. ^{[1
,2
]}

Xie, H. H. ^{[1
,2
]}

Liu, Y. T. ^{[1
,2
]}

Feng, B. ^{[1
,2
]}

Xie, J. ^{[1
,2
]}

Zhao, X. B. ^{[1
,2
,4
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

[2] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China

[3] Zhejiang Univ, Cyrus Tang Ctr Sensor Mat & Applicat, Hangzhou 310027, Zhejiang, Peoples R China

[4] Zhejiang Univ, Key Lab Adv Mat & Applicat Batteries Zhejiang Pro, Hangzhou 310027, Zhejiang, Peoples R China

来源：

EPL | 2013年 / 104卷 / 04期

关键词：

THERMOELECTRIC PROPERTIES; ZRNISN; BAND;

D O I：

10.1209/0295-5075/104/46003

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Alloying and grain refinement have been conducted to reduce the lattice thermal conductivity of FeVSb-based half-Heusler compounds. And the effects of point defect and boundary on phonon scattering are analyzed using the Callaway model. Point defect scattering and boundary scattering, respectively, cut out the high-frequency and low-frequency phonons. Consequently, most of the heat (similar to 70%) is carried by phonons with mean free path (mfp) in the range of 1-80 nm and 0.6-30 nm at Debye temperature and 650K, respectively, indicating that further reduction in lattice thermal conductivity should enhance the scattering of phonons with these characteristic mfp. Copyright (C) EPLA, 2013

引用

页数：5

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