Bipolar Resistive-Switching Phenomena and Resistive-Switching Mechanisms Observed in Zirconium Nitride-Based Resistive-Switching Memory Cells

被引：23
|
作者：
Kim, Hee-Dong [1 ]
An, Ho-Myoung [1 ]
Sung, Yun Mo [2 ]
Im, Hyunsik [3 ]
Kim, Tae Geun [1 ]
机构：
[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea
[2] Korea Univ, Dept Mat & Sci Engn, Seoul 136701, South Korea
[3] Dongguk Univ, Dept Semicond Sci, Seoul 100715, South Korea
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2013年 / 13卷 / 01期
基金：
新加坡国家研究基金会;
关键词：
Atomic force microscopy (AFM); resistive switching (RS); SCLC; ZrN;
D O I：
10.1109/TDMR.2012.2237404
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 10(4). The device also showed an endurance of > 10(9) cycles and a retention time of > 10(4) s at 85 degrees C. The temperature-dependent studies of ON/OFF states show that metallic conduction is responsible for ON state, whereas semiconducting or insulating behaviors are clearly observed from OFF-state devices. These results show that ZrN-based RSM can be used as a promising RSM device.
引用
收藏
页码：252 / 257
页数：6
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