Dynamic instability in resonant tunneling

被引:2
|
作者
Inkoferer, J [1 ]
Obermair, G
Claro, F
机构
[1] Univ Regensburg, Fak Phys, D-93040 Regensburg, Germany
[2] Pontificia Univ Catolica Chile, Fac Fis, Santiago 22, Chile
关键词
D O I
10.1103/PhysRevB.64.201405
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We show that a novel instability may be present in resonant tunneling through a quantum well in one, two, and three dimensions, when the resonance lies near the emitter Fermi level. A simple semiclassical model which simulates the resonance and the projected density of states by a nonlinear conductor, the Coulomb barrier by a capacitance, and the time evolution by an iterated map, is used. The model reproduces the observed hysteresis in such devices, and exhibits a series of bifurcations leading to fast chaotic current fluctuations.
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页数:4
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