Microwave reflection imaging using a magnetic tunnel junction based spintronic microwave sensor

被引：17

作者：

Fu, L. ^{[1
,2
]}

Cao, Z. X. ^{[1
,2
]}

Hemour, S. ^{[3
]}

Wu, K. ^{[3
]}

Houssameddine, D. ^{[4
]}

Lu, W. ^{[2
]}

Pistorius, S. ^{[1
]}

Gui, Y. S. ^{[1
]}

Hu, C. -M. ^{[1
]}

机构：

[1] Univ Manitoba, Dept Phys & Astron, Winnipeg, MB R3T 2N2, Canada

[2] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[3] Ecole Polytech Montral, Montreal, PQ H3T 1J4, Canada

[4] Everspin Technol, Chandler, AZ 85224 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 23期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1063/1.4769837

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A far-field microwave imaging technique has been developed using a spintronic sensor based on a magnetic tunnel junction (MTJ). Such a sensor can directly rectify a microwave field into a dc voltage signal using the Seebeck effect. Thanks to the high conversion efficiency of the microwave rectification in MTJs, the microwave power sensitivity of the spintronic sensor is on the order of 1-10mV/mW. This high sensitivity allows the sensor to directly measure the coherent spatial scattered microwave field distribution, which gives it the ability to non-destructively detect hidden objects down to a few wavelengths in size. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769837]

引用

页数：4

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