Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4 μm

被引：3

作者：

Gu, Y. ^{[1
]}

Zhang, Y. G. ^{[1
]}

Chen, X. Y. ^{[1
]}

Cao, Y. Y. ^{[1
]}

Zhou, L. ^{[1
]}

Xi, S. P. ^{[1
]}

Li, A. Z. ^{[1
]}

Li, Hsby ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2015年 / 425卷

基金：

中国国家自然科学基金;

关键词：

Molecular beam epitaxy; Arsenates; Semiconducting III-V materials; Laser diodes; EPITAXY; GROWTH;

D O I：

10.1016/j.jcrysgro.2015.02.091

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The effects of well widths and well numbers of InGaAs triangular quantum well lasers in 2.30-2.44 mu m range using antimony-free material system on InP substrates are investigated. The triangular quantum well was equivalently formed by using gas source molecular beam epitaxy grown InAs/In053Ga0.47As digital alloy and the pseudomorphic growth was confirmed by the X-ray diffraction measurements. Lasing at 2.30 mu m above 330 K under continuous wave operation has been achieved for the laser with four 13 nm quantum wells. By increasing the well width to 19 nm, the continuous wave wavelength has been extended to 2.44 mu m at 290 K, whereas the epitaxial quality and laser performances are deteriorated. For those lasers with well width up to 19 nm, the moderate reduction or the quantum well numbers can restrict the strain accumulation and improve the laser performances. Continuous wave lasing at 2.38 mu m above 300 K has been achieved. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：376 / 380

页数：5

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