Single Event Upset Characterization of the Zynq UltraScale plus MPSoC Using Proton Irradiation

被引：0
|
作者：
Hiemstra, David M. [1 ]
Kirischian, Valeri [1 ]
Brelski, Jakub [1 ]
机构：
[1] MDA, Brampton, ON L6S 4J3, Canada
来源：
2017 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2017年
关键词：
single event upset; SRAM FPGA; proton irradiation; Zynq UltraScale; MPSoC;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Proton induced SEU cross-sections of the SRAM which stores the logic configuration and certain functional blocks of the Zynq UltraScale+ MPSOC are presented. Upset rates in the space radiation environment are estimated.
引用
收藏
页码：135 / 138
页数：4
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