Focused-ion-beam-based rapid prototyping of nanoscale magnetic devices

被引:39
|
作者
Khizroev, S [1 ]
Litvinov, D
机构
[1] Florida Int Univ, ECE, Ctr Nanoscale Magnet Devices, Miami, FL 33174 USA
[2] Univ Houston, Ctr Appl Nanomagnet, Houston, TX 77204 USA
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
D O I
10.1088/0957-4484/15/3/R01
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this tutorial, focused-ion-beam (FIB)-based fabrication is considered from a very unconventional angle. FIB is considered not as a fabrication tool that can be used for mass production of electronic devices, similar to optical and E-beam-based lithography, but rather as a powerful too] to rapidly fabricate individual nanoscale magnetic devices for prototyping future electronic applications. Among the effects of FIB-based fabrication of magnetic devices, the influence of Ga+-ion implantation on magnetic properties is presented. With help of magnetic force microscopy (MFM), it is shown that there is a critical doze of ions that a magnetic material can be exposed to without experiencing a change in the magnetic properties. Exploiting FIB from such an unconventional perspective is especially favourable today when the future of so many novel technologies depends on the ability to rapidly fabricate prototype nanoscale magnetic devices. As one of the most illustrative examples, the multi-billion-dollar data storage industry is analysed as the technology field that strongly benefited from implementing FIB in the above-described role. The essential role of FIB in the most recent trend of the industry towards perpendicular magnetic recording is presented. Moreover, other emerging and fast-growing technologies are considered as examples of nanoscale technologies whose future could strongly depend on the implementation of FIB in the role of a nanoscale fabrication tool for rapid prototyping. Among the other described technologies are 'ballistic' magnetoresistance, patterned magnetic media, magnetoresistive RAM (MRAM), and magnetic force microscopy.
引用
收藏
页码:R7 / R15
页数:9
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