Domain wall creep in magnetic wires -: art. no. 107202
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作者:
Cayssol, F
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机构:Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
Cayssol, F
Ravelosona, D
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Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, FranceUniv Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
Ravelosona, D
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Chappert, C
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机构:Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
Chappert, C
Ferré, J
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机构:Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
Ferré, J
Jamet, JP
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机构:Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
Jamet, JP
机构:
[1] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
[2] Univ Paris 11, CNRS, UMR 8520, Phys Solides Lab, F-91405 Orsay, France
The dynamics of a 1D domain wall (DW) in magnetic wires patterned in 2D ultrathin Co films is studied as a function of the wire width w(0). The DW velocity v(H) is hugely reduced when w(0) is decreased, and its field dependence is consistent with a creep process with a critical exponent mu=1/4. The effective critical field scales as (1/w(0)). Measurements of v(H) in wires with controlled artificial defects show that this arises from the edge roughness introduced by patterning. We show that the creep law can be renormalized by introducing a topologically induced critical field proportional to (1/w(0)).