Emission properties of single-photon sources based on CdTe/ZnTe quantum dots

被引：0

作者：

Rakhlin, M. V. ^{[1
]}

Belyaev, K. G. ^{[1
]}

Sorokin, S. V. ^{[1
]}

Gronin, S. V. ^{[1
]}

Mukhin, I. S. ^{[2
,3
]}

Shubina, T. V. ^{[1
]}

Ivanov, S. V. ^{[1
]}

Toropov, A. A. ^{[1
]}

机构：

[1] Ioffe Inst, 26 Polytekhnicheskaya Str, St Petersburg 194021, Russia

[2] St Petersburg Acad Univ RAS, 8-3 Khlopina Str, St Petersburg 194021, Russia

[3] ITMO Univ, 49 Kronverksky Pr, St Petersburg 197101, Russia

来源：

18TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS | 2017年 / 816卷

基金：

俄罗斯科学基金会;

关键词：

D O I：

10.1088/1742-6596/816/1/012025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on single photon emission from single CdTe/ZnTe quantum dots (QDs) grown by thermally-activated molecular beam epitaxy providing a reduced QD lateral density below 10(10) cm(-2). For micro-photoluminescence spectroscopy studies and correlation measurements, the mesa structures of 200 and 500 nm diameters are fabricated by combination of electron-beam lithography and reactive plasma etching. Autocorrelation function of photons emitted from a single QD under cw excitation demonstrates antibunching with a value of g((2))(0) similar to 0.3 that is a signature of non-classical light.

引用

页数：5

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