Ultrafast carrier dynamics and radiative recombination in multiferroic BiFeO3 single crystals and thin films

被引：3

作者：

Sheu, Y. M. ^{[1
]}

Trugman, S. A. ^{[1
]}

Xiong, J. ^{[1
]}

Park, Y. -S. ^{[1
]}

Lee, S. ^{[2
]}

Yi, H. T. ^{[3
]}

Cheong, S. -W. ^{[3
]}

Jia, Q. X. ^{[1
]}

Taylor, A. J. ^{[1
]}

Prasankumar, R. P. ^{[1
]}

机构：

[1] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, MS K771, Los Alamos, NM 87545 USA

[2] Korea Atom Energy Res Inst, Taejon 305353, South Korea

[3] Rutgers State Univ, Rutgers Ctr Emergent Mat, Dept Phys & Astron, Piscataway, NJ 08854 USA

来源：

XVIIITH INTERNATIONAL CONFERENCE ON ULTRAFAST PHENOMENA | 2013年 / 41卷

关键词：

D O I：

10.1051/epjconf/20134103018

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report a detailed comparison of ultrafast carrier dynamics in single crystals and thin films of multiferroic BiFeO3 (BFO). Using degenerate femtosecond optical pump-probe spectroscopy, we find that the observed dynamics are qualitatively similar in both samples. After photoexcitation, electrons relax to the conduction band minimum through electron-phonon coupling, with subsequent carrier relaxation proceeding via various recombination pathways that extend to a nanosecond timescale. Subtle differences observed in our measurements indicate that BFO films have a higher band gap than single crystals. Overall, our results demonstrate that carrier relaxation in BFO is analogous to that in bulk semiconductors.

引用

页数：3

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