Superconducting niobium nitride thin films by reactive pulsed laser deposition

被引:21
|
作者
Ufuktepe, Y. [1 ]
Farha, A. H. [2 ,3 ,9 ]
Kimura, S. I. [4 ,5 ]
Hajiri, T. [4 ,6 ]
Imura, K. [4 ,7 ]
Mamun, M. A. [3 ,8 ]
Karadag, F. [1 ]
Elmustafa, A. A. [3 ,8 ]
Elsayed-Ali, H. E. [2 ,3 ]
机构
[1] Cukurova Univ, Dept Phys, TR-01330 Adana, Turkey
[2] Old Dominion Univ, Dept Elect & Comp Engn, Norfolk, VA 23529 USA
[3] Old Dominion Univ, Appl Res Ctr, Norfolk, VA 23529 USA
[4] Inst Mol Sci, UVSOR Facil, Okazaki, Aichi 4448585, Japan
[5] Grad Univ Adv Studies SOKENDAI, Sch Phys Sci, Okazaki, Aichi 4448585, Japan
[6] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648601, Japan
[7] Nagoya Univ, Dept Phys, Nagoya, Aichi 4648601, Japan
[8] Old Dominion Univ, Dept Mech & Aerosp Engn, Norfolk, VA 23529 USA
[9] Ain Shams Univ, Dept Phys, Fac Sci, Cairo 11566, Egypt
基金
美国国家科学基金会; 日本学术振兴会;
关键词
NbN; Pulsed laser deposition; Thin films; X-ray spectroscopy; TRANSITION-TEMPERATURES; MECHANICAL-PROPERTIES; ELASTIC-MODULUS; SINGLE-CRYSTAL; NBN; HARDNESS; INDENTATION; GROWTH;
D O I
10.1016/j.tsf.2013.08.051
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The structural, electronic, and nanomechanical properties of cubic niobium nitride thin films were investigated. The films were deposited on Si(100) under different background nitrogen gas pressures (26.7-66.7 Pa) at constant substrate temperature of 800 degrees C by reactive pulsed laser deposition. Our results reveal that the NbNx films exhibit a cubic delta-NbN with strong (111) orientation and highly-oriented textured structures. We find nitrogen background pressure to be an important factor in determining the structure of the NbNx films. The dependence of the electronic structure as well as that of the superconducting transition temperature (T-c) on the nitrogen gas background pressure is studied. A correlation between surface morphology, electronic and superconducting properties is found for the deposited NbNx thin films. The highly-textured delta-NbN films have a T-c up to 15.07 K. Nanoindentation with continuous stiffness method is used to evaluate the hardness and modulus of the NbNx thin films as a function of depth. The film deposited at nitrogen background pressure of 66.7 Pa exhibits improved superconducting properties and shows higher hardness values as compared to films deposited at lower nitrogen pressures. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:601 / 607
页数:7
相关论文
共 50 条
  • [41] Cubic aluminum nitride and gallium nitride thin films prepared by pulsed laser deposition
    Wang, LD
    Kwok, HS
    APPLIED SURFACE SCIENCE, 2000, 154 : 439 - 443
  • [42] Memristive effect in niobium oxide thin films obtained by the pulsed laser deposition
    Novodvorsky, O. A.
    Parshina, L. S.
    Khramova, O. D.
    Gusev, D. S.
    Polyakov, A. S.
    THIN SOLID FILMS, 2023, 780
  • [43] Tantalum oxide and niobium oxide thin films grown by pulsed laser deposition
    Fernandez, FE
    Marrero, PJ
    ADVANCED LASER PROCESSING OF MATERIALS - FUNDAMENTALS AND APPLICATIONS, 1996, 397 : 205 - 210
  • [44] Correlation between hardness and structure of carbon-nitride thin films obtained by reactive pulsed laser deposition
    György, E
    Nelea, V
    Mihailescu, IN
    Perrone, A
    Pelletier, H
    Cornet, A
    Ganatsios, S
    Werckmann, J
    THIN SOLID FILMS, 2001, 388 (1-2) : 93 - 100
  • [45] A new reactive pulsed laser ablation technique for the deposition of hard carbon and carbon-nitride thin films
    Alexandrou, I
    Zergioti, I
    Amaratunga, GAJ
    Healy, MJF
    Kiely, CJ
    Hatto, P
    Velegrakis, M
    Fotakis, C
    MATERIALS LETTERS, 1999, 39 (02) : 97 - 102
  • [46] Molybdenum nitride thin films synthesized by microwave electron cyclotron resonance - Assisted reactive pulsed laser deposition
    Camps, Enrique
    Campos-Gonzalez, E.
    Rivera-Rodriguez, C.
    Quinones-Galvan, G.
    Conde-Gallardo, A.
    THIN SOLID FILMS, 2025, 813
  • [47] Deposition of zinc oxide thin films by reactive pulsed laser ablation
    Bilkova, P.
    Zemek, J.
    Mitu, B.
    Marotta, V.
    Orlando, S.
    APPLIED SURFACE SCIENCE, 2006, 252 (13) : 4604 - 4609
  • [48] Reactive pulsed laser deposition of silica and doped silica thin films
    Ford, AC
    Tepper, T
    Ross, CA
    THIN SOLID FILMS, 2003, 437 (1-2) : 211 - 216
  • [49] ALN thin films obtained by pulsed laser deposition and reactive sputtering
    Craciunoiu, F
    Mihailescu, IN
    Ristoscu, C
    Socol, G
    Danila, M
    Conache, G
    Paun, V
    2003 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2003, : 79 - 82
  • [50] Effect of reactive atmosphere on pulsed laser deposition of hydroxyapatite thin films
    Mroz, W.
    Jedynski, M.
    Hoffman, J.
    Jelinek, M.
    Major, B.
    Prokopiuk, A.
    Szymanski, Z.
    COLA'05: 8TH INTERNATIONAL CONFERENCE ON LASER ABLATION, 2007, 59 : 720 - +