Temperature Effect on DC and Equivalent Circuit Parameters of 0.15-μm Gate Length GaN/SiC HEMT for Microwave Applications

被引：59

作者：

Alim, Mohammad Abdul ^{[1
]}

Rezazadeh, Ali A. ^{[2
]}

Gaquiere, Christophe ^{[3
]}

机构：

[1] Univ Chittagong, Dept Appl Phys Elect & Commun Engn, Chittagong 4331, Bangladesh

[2] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England

[3] Univ Sci & Technol Lille, Dept Microwave & Semicond, F-59650 Villeneuve Dascq, France

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2016年 / 64卷 / 11期

关键词：

AlGaN/GaN/SiC high-electron-mobility transistor (HEMT); dc and small signal circuit parameters; on-wafer measurements; thermal effect; ALGAN/GAN HEMTS; CHANNEL TEMPERATURE; THERMAL-RESISTANCE; GAN DEVICES; DEPENDENCE; FREQUENCY; SUBSTRATE;

D O I：

10.1109/TMTT.2016.2604815

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermal characterizations and modeling have been carried out on a 0.15 mu m x (4 x 50) nu m gate GaN-/SiC-based high-electron-mobility transistor varying the temperature from -40 degrees C to 150 degrees C and the frequency up to 50 GHz using on-wafer measurements. The thermal behavior of the dc parameters along with thermal resistance estimation and the equivalent circuit parameters along with cutoff and maximum frequencies were analyzed and reported using a single device. The temperature coefficients of these parameters were presented and deduced the influence of thermal effects on device parameters. These results are important for the circuit designer for future advancement and design optimizations of GaN-based monolithic microwave ICs.

引用

页码：3483 / 3491

页数：9

共 27 条

[21] Thermal characterization of DC and small-signal parameters of 150nm and 250nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate
Alim, Mohammad A.
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SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (12)
[22] A SUPERLOW-NOISE ALGAAS/INGAAS/GAAS DOPED CHANNEL HETEROJUNCTION FIELD-EFFECT TRANSISTOR (DC-HFET) WITH 0.15-MU-M GATE LENGTH
SAWADA, M
NAGAMI, K
NISHIDA, M
KAIZAKI, Y
INOUE, D
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[23] Analysis of DC characteristics and small signal equivalent circuit parameters of GaAs metal-semiconductor field effect transistors with different gate lengths and different gate contours by two-dimensional device simulations
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[24] Analysis of DC characteristics and small signal equivalent circuit parameters of GaAs metal-semiconductor field effect transistors with different gate lengths and different gate contours by two-dimensional device simulations
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[25] High performance 0.25μm gate-length doped-channel AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates
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[26] An intensive study on effects of lateral scaling and gate metals on the RF/ DC performance of recessed T-gated Fe-doped AlN/GaN/SiC HEMTs for future RF and microwave power applications
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MICROELECTRONIC ENGINEERING, 2023, 271-272
[27] Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications
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