Micromachined thermoelectric test device based on Silicon/Germanium superlattices:: Simulation, preparation and characterization of thermoelectric behavior

被引：0

作者：

Schumann, J ^{[1
]}

Kleint, CA ^{[1
]}

Vinzelberg, H ^{[1
]}

Thomas, J ^{[1
]}

Hecker, M ^{[1
]}

Nurnus, J ^{[1
]}

Boettner, H ^{[1
]}

Lambrecht, A ^{[1
]}

Künzel, C ^{[1
]}

Voelklein, F ^{[1
]}

机构：

[1] Leibniz Inst Solid State & Mat Res Dresden, D-01171 Dresden, Germany

来源：

TWENTY-SECOND INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '03 | 2003年

关键词：

D O I：

10.1109/ICT.2003.1287603

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Strain-symmetrized superlattice structures based on epitaxially grown Si/Ge multilayers are expected to be promising systems for efficient thermoelectric micro-systems. The paper presents the development of a membrane-type sensor device consisting of Si/Ge superlattice and Si(x)Gel(1-x)-alloy legs allowing the study of the thermoelectric behavior at minimized influence of the supporting substrate components. By means of numerical simulation the optimum layout parameters were determined as well as the temperature distribution within the device including the sensitivity to be expected were estimated. Black body radiation measurements of the functional parameters on nearly freestanding thermopile arrays in the sensor regime are presented.

引用

页码：677 / 681

页数：5

共 46 条

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