Interaction of THz radiation with semiconductors: Microscopic theory and experiments

被引：1

作者：

Steiner, J. T. ^{[1
]}

Kira, M. ^{[1
]}

Koch, S. W. ^{[1
]}

Grunwald, T. ^{[1
]}

Koehler, D. ^{[1
]}

Chatterjee, S. ^{[1
]}

Khitrova, G. ^{[2
]}

Gibbs, H. M. ^{[2
]}

机构：

[1] Univ Marburg, Dept Phys, Ctr Mat Sci, Renthof 5, D-35032 Marburg, Germany

[2] Univ Arizona, Coll Opt Sci, Tucson, AZ 85721 USA

来源：

ADVANCES IN SOLID STATE PHYSICS | 2008年 / 47卷

关键词：

D O I：

10.1007/978-3-540-74325-5_18

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A microscopic theory is presented for the Coulomb-interacting electronhole system in an optically excited semiconductor that is probed by weak THz radiation. The relevant equations for the THz response are summarized and numerically evaluated for different optical excitation conditions. Experimental results are presented for a high-quality InGaAs/GaAs quantum-well system under resonant excitation. Formation and decay of excitonic populations are investigated.

引用

页码：223 / +

页数：3

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