Effect of ternary mixed crystals on interface optical phonons in wurtizte InxGa1-xN/GaN quantum wells

被引：9
|
作者：
Huang, Wen-Deng [1 ,2 ]
Chen, Guang-De [1 ]
Ren, Ya-Jie [2 ]
机构：
[1] Xi An Jiao Tong Univ, Sch Sci, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Xian 710049, Peoples R China
[2] Shaanxi Univ Technol, Dept Phys, Hanzhong 723001, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 05期
基金：
中国国家自然科学基金;
关键词：
INXALYGA1-X-YN; SUPERLATTICES; ALLOYS;
D O I：
10.1063/1.4748173
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of ternary mixed crystals on the interface optical phonons in wurtizte InxGa1-xN/GaN quantum wells is studied based on the modified random-element isodisplacement model and dielectric continuum model. The results show that the interface optical phonons appear different frequency range with different indium concentration. The frequencies of interface optical phonons in the high frequency range decrease almost linearly with increasing indium concentration and do not vary almost linearly in the low frequency range. The indium concentration has more important effect on the electron-phonon interaction in low frequency range. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4748173]
引用
收藏
页数：5
相关论文
共 50 条
  • [1] Ternary mixed crystal effects on electron-interface optical phonon interactions in InxGa1-xN/GaN quantum wells
    Huang, Wen-Deng
    Chen, Guang-De
    Ye, Hong-Gang
    Ren, Ya-Jie
    PHYSICA B-CONDENSED MATTER, 2013, 410 : 33 - 41
  • [2] In-plane optical anisotropy in InxGa1-xN/GaN multiple quantum wells
    Chen, CH
    Huang, LY
    Chen, YF
    Lin, TY
    INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, 2002, : 284 - 287
  • [3] Effects of compressive strain on optical properties of InxGa1-xN/GaN quantum wells
    Khan, N.
    Li, J.
    APPLIED PHYSICS LETTERS, 2006, 89 (15)
  • [4] Comparison of Si doping effect in optical properties of GaN epilayers and InxGa1-xN quantum wells
    Oh, E
    Sone, C
    Nam, O
    Park, H
    Park, Y
    APPLIED PHYSICS LETTERS, 2000, 76 (22) : 3242 - 3244
  • [5] Effect of critical thickness on structural and optical properties of InxGa1-xN/GaN multiple quantum wells
    Lü, W
    Li, DB
    Li, CR
    Shen, F
    Zhang, Z
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (08) : 4362 - 4366
  • [6] Band offsets of InXGa1-xN/GaN quantum wells reestimated
    Biswas, Dipankar
    Kumar, Subindu
    Das, Tapas
    THIN SOLID FILMS, 2007, 515 (10) : 4488 - 4491
  • [7] Carrier localization mechanisms in InxGa1-xN/GaN quantum wells
    Watson-Parris, D.
    Godfrey, M. J.
    Dawson, P.
    Oliver, R. A.
    Galtrey, M. J.
    Kappers, M. J.
    Humphreys, C. J.
    PHYSICAL REVIEW B, 2011, 83 (11):
  • [8] Combined Effect of Carrier Localization and Polarity in InxGa1-xN/GaN Quantum Wells
    Hwang, Hyeong-Yong
    Choi, Sang-Bae
    Jeong, Hoonill
    Lee, Dong-Seon
    Jho, Young-Dahl
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2015, 15 (08) : 5933 - 5936
  • [9] Structural and optical characteristics of InxGa1-xN/GaN multiple quantum wells with different In compositions
    Kwon, YH
    Gainer, GH
    Bidnyk, S
    Cho, YH
    Song, JJ
    Hansen, M
    DenBaars, SP
    APPLIED PHYSICS LETTERS, 1999, 75 (17) : 2545 - 2547
  • [10] Optical properties and electronic subband structures in InxGa1-xN/GaN multiple quantum wells
    Lee, D. U.
    Ryu, J. T.
    You, J. H.
    Kim, T. W.
    Jeon, M. H.
    Yoo, K. H.
    Cho, C. Y.
    Park, S. J.
    THIN SOLID FILMS, 2011, 519 (15) : 5122 - 5125
12345