Ultraviolet photovoltaic effect in BiFeO3/Nb-SrTiO3 heterostructure

被引：12

作者：

Li, H. ^{[1
]}

Jin, K. X. ^{[1
]}

Yang, S. H. ^{[1
]}

Wang, J. ^{[1
]}

He, M. ^{[2
]}

Luo, B. C. ^{[1
]}

Wang, J. Y. ^{[1
]}

Chen, C. L. ^{[1
]}

Wu, T. ^{[2
]}

机构：

[1] Northwestern Polytech Univ, Shaanxi Key Lab Condensed Matter Struct & Prop, Sch Sci, Xian 710072, Peoples R China

[2] Nanyang Technol Univ, Div Phys & Appl Phys, Sch Phys & Math Sci, Singapore 637371, Singapore

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 08期

基金：

中国国家自然科学基金;

关键词：

This work is supported by the National Natural Science Foundation of China (No. 61078057; 51202195; and; 51172183); the Natural Science Foundation of Shaanxi Province (No. 2012JQ8013); Aviation Foundation of China (No. 2011ZF53065); Graduate Student Seed Fund (Z2012165); and NPU Foundation for Fundamental Research (Nos. JC201155; JC20110273; and JC20120246);

D O I：

10.1063/1.4759049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on ultraviolet photovoltaic effects in a BiFeO3/Nb-doped SrTiO3 heterostructure prepared by a pulsed laser deposition method. The heterostructure exhibits rectifying behaviors in the temperature range from 80 K to 300 K. The photovoltage of heterostructure is about 0.33 V at T = 80 K when it is illuminated by a KrF excimer laser with a wavelength of 248 nm. The peak photovoltages decrease with increasing the temperature because of the accumulation of photogenerated carriers. Moreover, the peak photovoltages of heterostructure almost linearly increase with an increase of the power density of laser at T = 300 K. The results reveal some properties that may be useful for possible applications in multiferroic photoelectric devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4759049]

引用

页数：4

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