The influence of residual O-2 gas in vacuum on the structural and luminescent properties of ZnF2:Mn thin films

被引：9
|
作者：
Nakanishi, Y [1 ]
Naito, S [1 ]
Nakamura, T [1 ]
Hatanaka, Y [1 ]
Shimaoka, G [1 ]
机构：
[1] SHIZUOKA UNIV,FAC ENGN,HAMAMATSU,SHIZUOKA 432,JAPAN
来源：
APPLIED SURFACE SCIENCE | 1996年 / 92卷
关键词：
D O I：
10.1016/0169-4332(95)00264-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The relationship between the structural and photoluminescent properties and the preparation conditions of ZnF2:Mn thin films deposited by electron beam evaporation has been investigated. It was found that a part of the ZnF2:Mn film deposited at a substrate temperature higher than 300 degrees C under about 10(-6) Ton is oxidized to ZnO by residual O-2 gas on the substrate. The formation of ZnO was confirmed by X-ray diffraction, spectral transmission, AES analysis and photoluminescence. This oxidation process could nor be observed even at 500 degrees C if the pressure is lowered to 10(-8) Torr, It was also found that the crystallinity was improved with increasing substrate temperature.
引用
收藏
页码：400 / 403
页数：4
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