AlGaN GaN dual-gate modulation-doped field-effect transistors

被引：12
|
作者：
Chen, CH [1 ]
Krishnamurthy, K
Keller, S
Parish, G
Rodwell, M
Mishra, UK
Wu, YF
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] WiTech, Goleta, CA 93117 USA
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 11期
关键词：
D O I：
10.1049/el:19990627
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The first results concerning dual-gate AlGaN/GaN MODFETs are presented. The devices have 0.65 mu m gate lengths and were grown by metal organic chemical vapour deposition (MOCVD) on a sapphire substrate. The continuous wave (CW) output power is in excess of 2.5W/mm at 4GHz. The corresponding large-signal gain is 11.5dB and the power added efficiency is 30.6%. Dual-gate devices with different gate lengths can provide simultaneous high breakdown voltage and high current-gain cutoff frequency for the broadband power amplifiers.
引用
收藏
页码：933 / 935
页数：3
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