Spatial-dispersion-induced acoustic anisotropy in semiconductor structures

被引：14

作者：

Alsina, F ^{[1
]}

Santos, PV ^{[1
]}

Hey, R ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.65.193301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate that a Rayleigh surface acoustic wave (SAW) propagating on the surface of a (001)-oriented GaAs quantum well structure induces different optical properties for propagation directions along the [110] and the [(1) over bar 10] symmetry axes. The nonequivalence of the two directions is attributed to the lift of the fourfold rotation symmetry of the optical and acoustic properties around the [001] growth axis by the finite wave vector of the SAW, a spatial dispersion effect which is also expected for bulk modes in zinc blende semiconductors.

引用

页码：1 / 4

页数：4

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