Optical properties of monoclinic HfO2 studied by first-principles local density approximation plus U approach

被引:15
|
作者
Li, Jinping [1 ,2 ]
Han, Jiecai [1 ]
Meng, Songhe [1 ]
Lu, Hantao [2 ,3 ,4 ]
Tohyama, Takami [2 ]
机构
[1] Harbin Inst Technol, Ctr Composite Mat, Harbin 150080, Peoples R China
[2] Kyoto Univ, Yukawa Inst Theoret Phys, Kyoto 6068502, Japan
[3] Lanzhou Univ, Ctr Interdisciplinary Studies, Lanzhou 730000, Peoples R China
[4] Lanzhou Univ, Key Lab Magnetism & Magnet Mat MoE, Lanzhou 730000, Peoples R China
基金
中国国家自然科学基金;
关键词
FILMS; GATE; DEPOSITION; OXIDE; ZRO2;
D O I
10.1063/1.4818765
中图分类号
O59 [应用物理学];
学科分类号
摘要
The band structures and optical properties of monoclinic HfO2 are investigated by the local density approximation + U approach. With the on-site Coulomb interaction being introduced to 5d orbitals of Hf atom and 2p orbitals of O atom, the experimental band gap is reproduced. The imaginary part of the complex dielectric function shows a small shoulder at the edge of the band gap, coinciding with the experiments. This intrinsic property of crystallized monoclinic HfO2, which is absent in both the tetragonal phase and cubic phase, can be understood as a consequence of the reconstruction of the electronic states near the band edge following the adjustment of the crystal structure. The existence of a similar shoulder-like-structure in the monoclinic phase of ZrO2 is predicted. (C) 2013 AIP Publishing LLC.
引用
收藏
页数:4
相关论文
共 50 条
  • [41] Optical properties of monoclinic SnI2 from relativistic first-principles theory
    Ravindran, P
    Delin, A
    Ahuja, R
    Johansson, B
    Auluck, S
    Wills, JM
    Eriksson, O
    PHYSICAL REVIEW B, 1997, 56 (11): : 6851 - 6861
  • [42] The Effect of Y Doping on Monoclinic, Orthorhombic, and Cubic Polymorphs of HfO2: A First Principles Study
    Pavoni, Eleonora
    Mohebbi, Elaheh
    Mencarelli, Davide
    Stipa, Pierluigi
    Laudadio, Emiliano
    Pierantoni, Luca
    NANOMATERIALS, 2022, 12 (23)
  • [43] Sulfur passivation effect on HfO2/GaAs interface: A first-principles study
    Wang, Weichao
    Gong, Cheng
    Shan, Bin
    Wallace, Robert M.
    Cho, Kyeongjae
    APPLIED PHYSICS LETTERS, 2011, 98 (23)
  • [44] A FIRST-PRINCIPLES STUDY ON THE STABLE PHASE IN YTTRIUM-DOPED HFO2
    Xiao, Xiaomin
    Yu, Chenxi
    Liu, Fei
    Kang, Jinfeng
    CONFERENCE OF SCIENCE & TECHNOLOGY FOR INTEGRATED CIRCUITS, 2024 CSTIC, 2024,
  • [45] Al passivation effect at the HfO2/GaAs interface: A first-principles study
    Cai, Genwang
    Sun, Qiang
    Jia, Yu
    Liang, Erjun
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2016, 41 : 1 - 5
  • [46] Strain effect on the stability in ferroelectric HfO2 simulated by first-principles calculations
    Fan, Sheng-Ting
    Chen, Yun-Wen
    Liu, C. W.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 53 (23)
  • [47] Indium passivation impact on HfO2/GaAs interface: A first-principles study
    Zhang, Lamei
    Shang, Jimin
    Cai, Genwang
    MODERN PHYSICS LETTERS B, 2017, 31 (18):
  • [48] First-principles investigation of H2O on HfO2 (110) surface
    Li, Lu
    Huang, Xin
    Zhang, Yong-Fan
    Guo, Xin
    Chen, Wen-Kai
    APPLIED SURFACE SCIENCE, 2013, 264 : 424 - 432
  • [49] Effect of Native Defects and Co Doping on Ferromagnetism in HfO2: First-Principles Calculations
    Han, Chong
    Yan, Shi-Shen
    Lin, Xue-Ling
    Hu, Shu-Jun
    Zhao, Ming-Wen
    Yao, Xin-Xin
    Chen, Yan-Xue
    Liu, Guo-Lei
    Mei, Liang-Mo
    JOURNAL OF COMPUTATIONAL CHEMISTRY, 2011, 32 (07) : 1298 - 1302
  • [50] Effect of Al doping on the reliability of HfO2 as a trapping layer: First-principles study
    Jiang Xian-Wei
    Dai Guang-Zhen
    Lu Shi-Bin
    Wang Jia-Yu
    Dai Yue-Hua
    Chen Jun-Ning
    ACTA PHYSICA SINICA, 2015, 64 (09)