Calculation of the electron spin relaxation time in GaAs by an acoustic piezoelectric phonon scattering

被引：0

作者：

Kang, Nam Lyong ^{[1
]}

机构：

[1] Pusan Natl Univ, Dept Nanomechatron Engn, Miryang 627706, Gyeongnam, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / 04期

关键词：

SEMICONDUCTORS; SILICON;

D O I：

10.7567/1347-4065/ab0006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electron spin relaxation times due to acoustic piezoelectric phonon scattering in GaAs are calculated based on a magnetic susceptibility formula derived using the projection-reduction method in the linear response scheme. The temperature, magnetic field, and electron density dependencies of the relaxation time are investigated. The result shows that the relaxation of the electron spin can be explained by the Elliott-Yafet mechanism and acoustic piezoelectric phonon scattering at a low temperature by comparison with the experimental result. (C) 2019 The Japan Society of Applied Physics

引用

页数：4

共 50 条

[21] Electron-Phonon Relaxation in Bilayer Graphene on a Piezoelectric Substrate
Ansari, Mohd Meenhaz
Ashraf, S. S. Z.
61ST DAE-SOLID STATE PHYSICS SYMPOSIUM, 2017, 1832
[22] Electron spin-phonon relaxation in quantum dots
Alcalde, AM
Marques, GE
BRAZILIAN JOURNAL OF PHYSICS, 2004, 34 (2B) : 705 - 707
[23] TIME-RESOLVED RAMAN-SCATTERING MEASUREMENT OF ELECTRON-OPTICAL PHONON INTERSUBBAND RELAXATION IN GAAS QUANTUM-WELLS
TATHAM, MC
RYAN, JF
FOXON, CT
SURFACE SCIENCE, 1990, 228 (1-3) : 127 - 130
[24] ANOMALOUS PHONON SCATTERING RESPONSIBLE FOR ELECTRON RELAXATION-TIME IN LONGITUDINAL MAGNETORESISTANCE IN BISMUTH
TANUMA, S
INADA, R
PHYSICS OF CONDENSED MATTER, 1975, 19 (1-4): : 95 - 104
[25] Electron spin coherence and effect of spin polarization on electron relaxation dynamics in GaAs
Teng, Lihua
Wang, Xia
Ge, Weikun
Lai, Tianshu
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 26 (09)
[26] Spin Relaxation in GaAs: Importance of Electron-Electron Interactions
Marchetti, Gionni
Hodgson, Matthew
McHugh, James
Chantrell, Roy
D'Amico, Irene
MATERIALS, 2014, 7 (04) : 2795 - 2814
[27] RELAXATION TIME OF ELECTRON-PHONON SYSTEMS
MAHAN, GD
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (07) : 1477 - &
[28] ELECTRON-MOBILITY IN GAAS DUE TO PIEZOELECTRIC SCATTERING
ALKAN, B
UNAL, B
OZDEMIR, AR
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (11) : 1458 - 1462
[29] Hyperfine-phonon spin relaxation in a singleelectron GaAs quantum dot
Camenzind, Leon C.
Yu, Liuqi
Stano, Peter
Zimmerman, Jeramy D.
Gossard, Arthur C.
Loss, Daniel
Zumbuhl, Dominik M.
NATURE COMMUNICATIONS, 2018, 9
[30] SCREENING EFFECT ON PIEZOELECTRIC PHONON-ELECTRON SCATTERING AND MOBILITY
MURAYAMA, Y
SOLID STATE COMMUNICATIONS, 1967, 5 (08) : 621 - &

← 1 2 3 4 5 →