Calculation of the electron spin relaxation time in GaAs by an acoustic piezoelectric phonon scattering

被引：0
|
作者：
Kang, Nam Lyong [1 ]
机构：
[1] Pusan Natl Univ, Dept Nanomechatron Engn, Miryang 627706, Gyeongnam, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / 04期
关键词：
SEMICONDUCTORS; SILICON;
D O I：
10.7567/1347-4065/ab0006
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electron spin relaxation times due to acoustic piezoelectric phonon scattering in GaAs are calculated based on a magnetic susceptibility formula derived using the projection-reduction method in the linear response scheme. The temperature, magnetic field, and electron density dependencies of the relaxation time are investigated. The result shows that the relaxation of the electron spin can be explained by the Elliott-Yafet mechanism and acoustic piezoelectric phonon scattering at a low temperature by comparison with the experimental result. (C) 2019 The Japan Society of Applied Physics
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页数：4
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