Impact of Ga Doping on the Physical Properties of Ge-S-Ga Glassy Alloy

被引:0
|
作者
Rana, Anjli [1 ]
Sharma, Raman [1 ]
机构
[1] Himachal Pradesh Univ, Dept Phys, Shimla 171005, India
关键词
OPTICAL-PROPERTIES; CHALCOGENIDE;
D O I
10.1063/1.5083590
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of Ga doping on the physical properties i.e., density, packing density, molar volume, cohesive energy and band gap of Ge20S80-xGax glassy alloy is investigated theoretically. An increase in the density, packing density and the molar volume has been observed with an increase in gallium content. Optical band gap of thin films is calculated by Shimakawa's relation. It is found that the optical band gap decreases with an increase in Ga content. The decrease in optical band gap is attributed to the decrease in cohesive energy and formation of defect states above the valence band. The physical properties obtained are in good agreement with earlier reported results.
引用
收藏
页数:4
相关论文
共 50 条
  • [21] Temperature-dependent photoluminescence in Er-doped Ge-S-Ga glasses
    Ivanova, ZG
    Tonchev, D
    Ganesan, R
    Gopal, ESR
    Kasap, SO
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2005, 7 (04): : 1863 - 1867
  • [22] EPR study of defect formation and gamma-irradiation effects in Ge-S-Ga glasses
    Zhilinskaya, EA
    Kudojarova, VK
    Ivanova, ZG
    PHYSICS AND CHEMISTRY OF GLASSES, 1996, 37 (02): : 68 - 72
  • [23] Features in the photoluminescence line-shape of heavily Er-doped Ge-S-Ga glasses
    Ivanova, Z. G.
    Cernoskova, E.
    Cernosek, Z.
    Vlcek, Mil.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2009, 355 (37-42) : 1873 - 1876
  • [24] RAMAN INVESTIGATION OF REVERSIBLE PHOTOINDUCED EFFECTS IN SEMICONDUCTING GE-S-GA THIN-FILM GLASSES
    RAPTIS, C
    IVANOVA, ZG
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (05) : 2617 - 2620
  • [25] Low-temperature Er3+ emission in Ge-S-Ga glasses excited by host absorption
    Ivanova, Z. G.
    Aneva, Z.
    Ganesan, R.
    Tonchev, D.
    Gopal, E. S. R.
    Rao, K. S. R. K.
    Allen, T. W.
    DeCorby, R. G.
    Kasap, S. O.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2007, 353 (13-15) : 1418 - 1421
  • [26] EFFECT OF Ga/Ge RATIONS ON THE STRUCTURE AND ELECTRIC PROPERTIES OF Ga-Ge-Sb-S-AgI SYSTEM
    Dong, P.
    Jiao, Q.
    Zhang, Y.
    Ma, B.
    Shan, H.
    Dai, S.
    Xu, T.
    CHALCOGENIDE LETTERS, 2021, 18 (01): : 23 - 29
  • [27] The Effect of Ga Doping on the Physical Properties of Lead Sulphide Thin Films
    Radhakrishnan, Reshmi
    Rahman, Hiba
    Dhanya, S.
    Geethu, R.
    Karim, Nafsia
    Faseela, K.
    Sreenivasan, P., V
    Pradeep, B.
    Philip, Rachel Reena
    OPTICS: PHENOMENA, MATERIALS, DEVICES, AND CHARACTERIZATION: OPTICS 2011: INTERNATIONAL CONFERENCE ON LIGHT, 2011, 1391
  • [28] Low-temperature luminescence quenching and local ordering study of Er-doped Ge-S-Ga glasses
    Ivanova, ZG
    Ganesan, R
    Adarsh, KV
    Vassilev, VS
    Aneva, Z
    Cernosek, Z
    Gopal, ESR
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2005, 7 (01): : 345 - 348
  • [29] Impact of Heterovalent Cations (Ga, Co) Co-doping on the Physical Properties of ZnO Films for Optoelectronic Applications
    Tiwari, Aradhana
    Sahay, P. P.
    BRAZILIAN JOURNAL OF PHYSICS, 2022, 52 (05)
  • [30] Impact of Heterovalent Cations (Ga, Co) Co-doping on the Physical Properties of ZnO Films for Optoelectronic Applications
    Aradhana Tiwari
    P. P. Sahay
    Brazilian Journal of Physics, 2022, 52