Shock Testing of Silicon Nitride and Beryllium Thin Film Membranes

被引：0

作者：

Brough, David ^{[1
]}

Barrett, Lawrence ^{[1
]}

Coffin, Mallorie ^{[2
]}

Husted, Caleb ^{[2
]}

Vanfleet, Richard ^{[1
]}

Liddiard, Steven ^{[2
]}

Cornaby, Sterling ^{[2
]}

Davis, Robert ^{[1
]}

机构：

[1] Brigham Young Univ, Provo, UT 84602 USA

[2] Moxtek Inc, Orem, UT USA

来源：

NANOTECHNOLOGY 2012, VOL 2: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL | 2012年

关键词：

membrane; shock; silicon nitride; beryllium; x-ray windows;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon nitride and beryllium thin film membranes are often used in X-ray windows for elemental analysis systems. A determination of the shock that theses membranes can sustain without breaking is valuable for these applications. In this study thin film membranes of both materials were subjected to shocks produced by a pendulum shock test apparatus. The silicon nitride windows were found to catastrophically fail at an acceleration of 8,145.62 g or less while the beryllium windows were subjected to accelerations as high as 30,516.41 g without failing.

引用

页码：436 / 438

页数：3

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