200 kVA Compact IGBT Modules with Double-Sided Cooling for HEV and EV

被引：0

作者：

Chang, Hsueh-Rong ^{[1
]}

Bu, Jiankang ^{[1
]}

Hauenstein, Henning ^{[1
]}

Wittmann, Michael ^{[1
]}

Marcinkowski, Jack ^{[1
]}

Pavier, Mark ^{[2
]}

Palmer, Scott ^{[2
]}

Tompkins, Jim ^{[3
]}

机构：

[1] Int Rectifier Corp, Automot Prod Business Unit, 101 N Sepulveda Blvd, El Segundo, CA 90245 USA

[2] Int Rectifier Corp, Adv Packaging, El Segundo, CA 90245 USA

[3] Int Rectifier Corp, Elect Mot Syst, El Segundo, CA 90245 USA

来源：

2012 24TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2012年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

High power compact IGBT half bridge modules with a current rating of 300A and a blocking voltage of 650V using ultra thin IGBTs and diodes have been successfully developed with double-sided cooling capability. The wirebond-less package building block called (COOLiRDIE)-D-2 (TM) has a small area of 28.5 mm x 16 mm with a power rating 200 kVA, This is the most compact IGBT package reported today. A low on-state voltage of 1.6V at 300A is achieved in the wirebond-less package. The combination of lower on-state voltage and larger heat exchange area due to the solderable front metal (SFM), increases the IGBT module current carrying capability by 30%.

引用

页码：299 / 302

页数：4

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