Light induced degradation in B doped Cz-Si solar cells

被引：11

作者：

Carvalho, Alexandra ^{[1
]}

Santos, Paulo ^{[1
]}

Coutinho, Jose ^{[1
]}

Jones, Robert ^{[2
]}

Rayson, Mark J. ^{[3
]}

Briddon, Patrick R. ^{[4
]}

机构：

[1] Univ Aveiro, I3N, Dept Phys, P-3810193 Aveiro, Portugal

[2] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

[3] Lulea Univ Technol, Dept Engn Sci & Math, S-97187 Lulea, Sweden

[4] Newcastle Univ, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2012年 / 209卷 / 10期

关键词：

boron; degradation; oxygen; silicon; solar cells; theory; INTERSTITIAL BORON; RECOMBINATION CENTERS; SILICON;

D O I：

10.1002/pssa.201200196

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We analyse the formation energy of interstitial boron (Bi) and the properties of the defect resulting from its association with an oxygen dimer (BiO2i) to evaluate the possibility that it may be the slow-forming centre responsible for the light-induced degradation of B-doped Si solar cells. However, we find that the formation energy of Bi is too high, and therefore its concentration is negligible. Moreover, we find that the lowest energy form of BiO2i is a shallow donor, and the deep donor form is high in energy. Lowest energy structure of the BiO2i defect.

引用

页码：1894 / 1897

页数：4

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